to ? 92 1. emitter 2. collector 3. base jiangsu changjiang electron ics technology co., ltd to-92 plastic-encapsulate transistors 2SB561 transistor (pnp) features z low frequency power amplifier maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =- 0.01ma,i e =0 -25 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -20 v emitter-base breakdown voltage v (br)ebo i e =-0.01ma,i c =0 -5 v collector cut-off current i cbo v cb =-20v,i e =0 -1 a emitter cut-off current i ebo v eb =-5v,i c =0 -1 a dc current gain h fe * v ce =-1v, i c =-0.15a 85 240 collector-emitter saturation voltage v ce(sat) i c =-0.5a,i b =-0.05a -0.5 v base-emitter voltage v be v ce =-1v, i c =-0.15a -1 v collector output capacitance c ob v cb =-10v,i e =0, f=1mhz 20 pf transition frequency f t v ce =-1v, i c =-0.15a 350 mhz *pulse test classification of h fe rank b c range 85-170 120-240 symbol parameter value unit v cbo collector-base voltage -25 v v ceo collector-emitter voltage -20 v v ebo emitter-base voltage -5 v i c collector current -700 ma p c collector power dissipation 500 mw r ja thermal resistance from junction to ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150 www.cj-elec.com 1 c , dec ,201 5
0 l q 0 d [ 0 l q 0 d [ a 3.300 3 .700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d 4. 4.700 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 - 1.600 0.063 h 0.000 0.380 0.000 0.015 6 \ p e r o ' l p h q v l r q v , q 0 l o o l p h w h u v ' l p h q v l r q v , q , q f k h v 1.270 typ 0.050 typ 7 2 3 d f n d j h 2 x w o l q h ' l p h q v l r q v 7 2 6 x j j h v w h g 3 d g / d \ r x w z z z f m h o h f f r p & ' h f
7 2 7 d s h d q g 5 h h o z z z f m h o h f f r p & ' h f
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